[1]刘亚,刘科高.掺杂改善CuInSe2薄膜光伏特性的研究进展[J].山东建筑大学学报,2011,(02):170-173.
 LIU Ya LIU Ke-gao.Recent progress in doping to improve the photoelectrical properties of CuInSe2 thin film[J].Journal of Shandong jianzhu university,2011,(02):170-173.
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掺杂改善CuInSe2薄膜光伏特性的研究进展
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《山东建筑大学学报》[ISSN:1673-7644/CN:37-1449/TU]

卷:
期数:
2011年02期
页码:
170-173
栏目:
综合述评
出版日期:
2011-04-15

文章信息/Info

Title:
Recent progress in doping to improve the photoelectrical properties of CuInSe2 thin film
作者:
刘亚刘科高
山东建筑大学 材料科学与工程学院 山东 济南 250101
Author(s):
LIU Ya   LIU Ke-gao
School of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
关键词:
铜铟硒太阳电池薄膜掺杂
Keywords:
 CuInSe2 solar cell thin film doping
分类号:
TB34
文献标志码:
A
摘要:

CuInSe2薄膜太阳能电池是当前可再生能源领域的研究热点之一。掺杂在一定程度上起到提高薄膜电池光电性能及降低薄膜电池成本的作用。从元素掺杂角度出发,对元素掺杂的种类、方式,掺杂

元素在薄膜电池光电性能和相互作用机制上的影响进行了重点综述,最后提出了当前CuInSe2薄膜电池存在的主要问题和发展方向。

Abstract:

 
CuInSe2 thin film solar cell is one of today’s hot issues in the research field of renewable energy. In some degree, doping can improve photoelectric properties of

thin film solar cell and reduce the cost of thin film solar cell. From the perspective of doping, kinds and ways of doping as well as its effect and internal mechanism  on the

properties of CIS films and thin film solar cells are reviewed. In the end, the study presents the major problems and developments in the CuInSe2 thin film solar cells.

更新日期/Last Update: 2011-07-05